|
Indium
Bumping Guidelines
|
|
Design
Guidelines
|
Indium
Bumps
|
| 1 |
Bump
Height Average |
25
µm std. (Capability: 5-50 µm) |
| 2 |
Bump
Height Uniformity |
+/-
5 µm (in die), +/- 5 µm (in wafer), +/- 10 µm (wfr to wfr) |
| 3 |
Bump
Pitch |
20
µm Minimum |
| 4 |
Bump
Spacing |
10µm
Minimum |
| 5 |
Bump
to Pass. Overlap |
7
µm Per Side Minimum |
| 6 |
Edge
of Bump to Al |
7
µm Per Side Minimum |
| 7 |
Passivation
Opening |
10µm
Minimum |
| 8 |
Passivation
Angle of Slope |
>
60 Degrees |
| 9 |
Passivation
Type |
Nitride,
OxyNitride, Polyimide |
| 10 |
Passivation
Height |
0.5
- 1.8 µm |
| 11 |
Wafer
Edge Exclusion |
3
mm |
| 12 |
Bump
Mask Design and Layout |
TLMI
In-house Design Capability: Require GDSII, Stepping Distance,
Wafer Map |
|
|
Bump
Specifications
|
Indium
Bumps
|
| 1 |
Bump
Material |
99.9+%
Indium |
| 2 |
Bumping
Method |
Electroplating |
| 3 |
UBM
Material |
Ti/W |
| 4 |
UBM
Deposition Method |
Sputtering |
|
